Aggregation, thermal annealing, and hosting effects on performances of an acridan-based TADF emitter

被引：52

作者：

Skuodis, Eigirdas ^{[1
]}

Bezvikonnyi, Oleksandr ^{[1
]}

Tomkeviciene, Ausra ^{[1
]}

Volyniuk, Dmytro ^{[1
]}

Mimaite, Viktorija ^{[1
]}

Lazauskas, Algirdas ^{[2
]}

Bucinskas, Audrius ^{[1
]}

Keruckiene, Rasa ^{[1
]}

Sini, Gjergji ^{[3
]}

Grazulevicius, Juozas Vidas ^{[1
]}

机构：

[1] Kaunas Univ Technol, Dept Polymer Chem & Technol, Radvilenu Pl 19, LT-50254 Kaunas, Lithuania

[2] Kaunas Univ Technol, Inst Mat Sci, K Barsausko St 59, LT-51423 Kaunas, Lithuania

[3] Univ Cergy Pontoise, EA 2528, Lab Physicochim Polymeres & Interfaces, 5 Mail Gay Lussac, F-95031 Cergy Pontoise, France

来源：

ORGANIC ELECTRONICS | 2018年 / 63卷

关键词：

OLED; TADF; Annealing; Host; Isophthalonitrile; Acridane; ACTIVATED DELAYED FLUORESCENCE; RELIABLE PREDICTION; EFFICIENCY; DIODES; EMISSION; MOBILITY; OLEDS; PHOSPHORESCENT; FUNCTIONALS;

D O I：

10.1016/j.orgel.2018.09.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

New derivative acridan and isophthalonitrile (DAcIPN) was designed and synthesized as efficient TADF-type emitter with photoluminescence quantum yield of doped solid-state layer reaching 83%. Tuning of emission and efficiency of TADF emitter was performed by controlling the singlet-triplet energy splitting. Three important effects concerning the solid-state photophysics of TADF emitter was observed and analyzed, providing deep insight on the following new- or opposed-to-established results: (i) the TADF efficiency of DAcIPN in guest-host mixtures is insensitive to the host polarity; (ii) aggregation and (iii) annealing processes were found to respectively reduce and increase the dihedral angle between isophthalonitrile ring and acridan moiety, with strong impacts on the photoluminescence parameters. Thermal annealing of DAcIPN-based systems helps both the diffusion of DAcIPN molecules towards a better phase mixing (disaggregation), and the molecular geometry relaxation towards larger dihedral angles. Organic light-emitting diodes with smaller degree of aggregation of DAcIPN demonstrate outstanding lighting characteristics: brightness of 20700 (at 8 V) and 44900 (at 11 V) cd/m(2), maximum current, power and external quantum efficiencies of 68 and 63 cd/A, 62 and 33 lm/W, 22.5 and 17.1%, for green and yellow devices respectively.

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页码：29 / 40

页数：12

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