Rapid UV-A photo detection using a BTBT organic thin-film transistor enhanced by a 1,5-dichloro-9,10-dintiro-anthracene acceptor

被引:11
作者
Smithson, C. S. [1 ,2 ]
Ljubic, D. [2 ]
Wu, Y. [1 ,3 ]
Zhu, S. [2 ]
机构
[1] Xerox Res Ctr Canada Ltd, 2660 Speakman Dr, Mississauga, ON L5K 2L1, Canada
[2] McMaster Univ, Dept Chem Engn, Hamilton, ON LS8 4L8, Canada
[3] Corp Res, TE Connect, 306 Constitut Dr, Menlo Pk, CA 94025 USA
关键词
Organic thin-film transistor; Photoresponsivity; Benzothiophene semiconductor; Electron acceptor; FIELD-EFFECT TRANSISTORS; AZOBENZENE DERIVATIVES; SEMICONDUCTOR; PERFORMANCE; PHOTOTRANSISTORS; SENSORS; PHOTODETECTORS; FABRICATION; NANOWIRES; MOLECULES;
D O I
10.1016/j.orgel.2016.06.022
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A UV-A sensitive phototransistor was demonstrated using an organic semiconductor 2,7-dipentyl[1] benzothieno[3,2- b][1] benzothiophene (C5-BTBT) and a strong electron acceptor 1,5-dichloro-9,10-dintiro-anthracene (2Cl-2NO(2)-Anth) which is not photo-isomerizable. At 0 gate bias the photo-responsivity of the device begins to saturate at an incident power P-inc = 1 mW/cm(2), where a photocurrent-to-dark current ratio (P) of P > 10(5) is observed with a photoresponsivity of 9 A/W. The photoresponsivity was increased with the decrease of P-inc, reaching 40 A/W at a P-inc = 0.0427 mW/cm(2). A persistent photocurrent with a P > 10(5) was observed for more than 2 h, demonstrating the potential use for rewritable photo memory. By applying a gate voltage program consisting of a reset pulse of -90 V every 2nd data point, the device can perform as a UV sensor or switch at the timescale of 600 ms. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:42 / 46
页数:5
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