Cu(InGa)Se2 PHOTOVOLTAICS ON INSULATED STAINLESS STEEL WEB SUBSTRATE

被引:0
|
作者
Eser, Erten [1 ]
Fields, Shannon [1 ]
Kim, Woo K.
McQuiston, Elizabeth [2 ]
Kim, Kihwan [1 ,2 ]
Shafarman, William N. [1 ]
机构
[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA
[2] Dow Corning Corp, Auburn, NY 48611 USA
来源
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年
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中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This paper presents data on the use of Stainless Steel (SS) foils, coated with 3 to 5 mu m silicone based resin (SBR) developed by Dow Corning Corporation (DCC) for Cu(InGa)Se-2 based PV devices. The substrate validation was performed by the device performances on R2R deposited Cu(InGa)Se-2 via elemental evaporation and, to a limited extent, on Cu(InGa)Se-2 films from metal precursor selenization. Initially, it is shown that a 430SS base is preferred to others due to a better thermal expansion match to Cu(InGa)Se-2. The SBR-coated SS was found to be an excellent substrate in terms of (i) the adhesion of Mo and Cu(InGa)Se-2 films, (ii) its surface smoothness, and (iii) its operational stability up to 600 degrees C. Na was introduced into the R2R deposition process by co-evaporating NaF during deposition. Presence of Na in the films was determined by SIMS depth profiling. The highest small area device performance from R2R deposition was 15.2%. In addition, 9ft and 29ft long 8" wide Cu(InGa)Se-2 webs fabricated in the reactor showed machine direction center line, and efficiencies that averaged more than 10%. Precursor selenization process gave the highest efficiency of 12.3% with 10nm NaF deposited on the SBR or on the precursors. Work on developing monolithically integrated 3"x3" mini-modules has been initiated. Encouraging results were obtained in laser scribing the Mo back contact.
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页数:6
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