Bonding and gap states at GaAs-oxide interfaces

被引：7

作者：

Robertson, John ^{[1
]}

Lin, Liang ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 04期

关键词：

GaAs; bonding; interface; SCANNING-TUNNELING-MICROSCOPY; FIELD-EFFECT TRANSISTORS; ATOMIC-STRUCTURE; DEPOSITION;

D O I：

10.1016/j.mee.2010.09.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The nature of bonding and possible causes of Fermi level pinning at high mobility-high dielectric constant oxide GaAs:HfO2 interfaces are discussed. It is argued that these are atoms with defective bonding, rather than states due to the bulk semiconductor of its interface. Electron-counting rules are used to define interfaces which are insulating, and which can be used in future as hosts for interfaces containing defects. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：373 / 376

页数：4