An analytical model of an OCVD-Bdsed measurement technique of the local carrier lifetime

被引：7
作者：
Bellone, Salvatore [1 ]
Licciardo, Gian Domenico
Guerriero, Gabriele
Rubino, Alfredo
机构：
[1] Univ Salerno, Dept Informat & Elect Engn, I-84084 Salerno, Italy
[2] Univ Naples Federico II, Dept Math & Applicat, I-80138 Naples, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 11期
关键词：
carrier recombination lifetime; lifetime profile; measurement technique; modeling; negative resistance; open-circuit voltage decay (OCVD);
D O I：
10.1109/TED.2007.907162
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A model of a new technique to measure the spatial distribution of the majority and minority carrier lifetime along epilayers is presented. Being in good agreement with simulations, this model clarifies the behavior of the test structure used in the technique and gives a physical interpretation of the measured quantities.
引用
收藏
页码：2998 / 3006
页数：9
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