Morphology and Crystal Structure of Cu2NiSn(S,Se)4 Thin Films Obtained by an Electrodeposition-Annealing Process

Today, an actual task of photovoltaics is the search for new light-absorbing materials for solar cells, which will make them more efficient and economically affordable. Semiconductor Cu2NiSn(S,Se)(4) (CNTSSe) thin films are promising materials due to suitable optical and electrical properties. This compound consists of abundant, inexpensive, and low-toxicity elements. However, few results of studying the properties of CNTSSe films have been presented in the literature. This paper presents the results of studying the morphology, phase composition, and crystal structure of the CNTSSe films, which were first obtained by high-temperature annealing of electrodeposited Ni/Cu/Sn/Ni precursors on glass/Mo substrates in chalcogen vapor. The films were studied using X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. It has been found that sequential electrochemical deposition makes it possible to obtain the Ni/Cu/Sn/Ni precursors of the required quality for further synthesis of the films. It is shown that high-temperature annealing in chalcogen vapor in air makes it possible to synthesize stable polycrystalline CNTSSe films. The obtained results confirm that the production of CNTSSe films is suitable for use in solar cells by the proposed method, which can be improved by more precise control of the precursor composition and annealing conditions.