Studying of quantum-size effects origination in semiconducting lead sulfide nanocrystals

被引:3
作者
Kovalev, A. I. [1 ]
Wainshtein, D. L. [1 ]
Rashkovskiy, A. Yu. [1 ]
Golan, Y. [2 ]
Osherov, A. [2 ]
Ashkenazy, N. [2 ]
机构
[1] CNIICHERMET, Bardin Cent Res Sci Inst Ferrous Met, Inst Met Sci & Phys Met, Moscow 105005, Russia
[2] Ben Gurion Univ Negev, Fac Engn Sci, IL-84105 Beer Sheva, Israel
关键词
PBS THIN-FILMS; ELECTRONIC-STRUCTURE; FLUORESCENCE; SPECTROSCOPY; GAAS(100); DOTS;
D O I
10.1134/S2070205110060018
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Lead sulfide (PbS) crystals with sizes from 20 to 500 nm were deposited in chemical bath from an alkaline solution (CBD method). The morphology of specimens was studied using high resolution scanning electron microscopy (HRSEM). Influence of crystallite sizes on the electronic structure was studied with X-ray photoelectron spectroscopy (XPS) and high resolution electrons energy losses spectroscopy (HREELS). The work function was measured with a Kelvin probe microscopy in air. The photoelectron doublet peaks at spectra of Pb 4f donor and S 2p acceptor were found to be shifted toward the higher binding energies comparing to the corresponding lines positions in the reference PbS compound. This shift increases with decreasing of the crystals size. The effect of size shift in lead sulfide could be noticed when size is smaller than 300 nm. HREELS showed that dispersion of nanoparticles causes smoothing of the PbS band gap in different directions of reciprocal lattice, and the minimal transition energy increases from 0.39 to 3.62 eV. The work function of the material is shown to be in inverse proportion to the semiconductor crystal size. This data correlates well with the electron spectroscopy results.
引用
收藏
页码:633 / 638
页数:6
相关论文
共 16 条
[1]   Ultra narrow PbS nanorods with lntense fluorescence [J].
Acharya, Somobrata ;
Gautam, Ujjal K. ;
Sasaki, Toshio ;
Bando, Yoshio ;
Golan, Yuval ;
Ariga, Katsuhiko .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (14) :4594-+
[2]  
Delin A, 1998, INT J QUANTUM CHEM, V69, P349, DOI 10.1002/(SICI)1097-461X(1998)69:3<349::AID-QUA13>3.0.CO
[3]  
2-Y
[4]  
FERREIRA, 1972, REV BRAS FIS, V2, P67
[5]   The peculiarities of electronic structure of Si nanocrystals formed in SiO2 and Al2O3 matrix with and without P doping [J].
Kovalev, A ;
Wainstein, D ;
Tetelbaurn, D ;
Mikhailov, A .
SURFACE AND INTERFACE ANALYSIS, 2006, 38 (04) :433-436
[6]   The electron and crystalline structure features of ion-synthesized nanocomposite of Si nanocrystals in Al2O3 matrix revealed by electron spectroscopy [J].
Kovalev, A. ;
Wainstein, D. ;
Tetelbaum, D. ;
Mikhaylov, A. ;
Pavesi, L. ;
Ferrarioli, L. ;
Ershov, A. ;
Belov, A. .
PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100
[7]   Investigation of the electronic structure of the phosphorus-doped Si and SiO2 : Si quantum dots by XPS and HREELS methods [J].
Kovalev, AI ;
Wainstein, DL ;
Tetelbaum, DI ;
Hornig, W ;
Kucherehko, YN .
SURFACE AND INTERFACE ANALYSIS, 2004, 36 (08) :959-962
[8]   A study on Si nanocrystal formation in Si-implanted SiO2 films by x-ray photoelectron spectroscopy [J].
Liu, Y ;
Chen, TP ;
Fu, YQ ;
Tse, MS ;
Hsieh, JH ;
Ho, PF ;
Liu, YC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (19) :L97-L100
[9]   The role of solution composition in chemical bath deposition of epitaxial thin films of PbS on GaAs(100) [J].
Osherov, A. ;
Ezersky, V. ;
Golan, Y. .
JOURNAL OF CRYSTAL GROWTH, 2007, 308 (02) :334-339
[10]   Microstructure and morphology evolution in chemically deposited semiconductor films: 4. From isolated nanoparticles to monocrystalline PbS thin films on GaAs(100) substrates [J].
Osherov, A. ;
Ezersky, V. ;
Golan, Y. .
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2007, 37 (01) :39-47