Studies on dislocation patterning in 6-inch GaAs crystals

被引：6

作者：

Rudolph, P. ^{[1
]}

Frank-Rotsch, Ch. ^{[1
]}

Juda, U. ^{[1
]}

Eichler, St. ^{[2
]}

Scheffer-Czygan, M. ^{[2
]}

机构：

[1] Inst Crystol Growth, Max Born Str 2, D-12489 Berlin, Germany

[2] Freiberger Compound Mat GmbH, D-09599 Freiberg, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8 | 2007年 / 4卷 / 08期

关键词：

D O I：

10.1002/pssc.200675439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The present paper investigates the correlations between the cell dimension d of characteristic dislocation cell patterns and acting thenno-elastic stress tau at the growth of 6-inch semi-insulating VCz and VGF GaAs crystals. Whereas the dislocation density and cells are analysed experimentally the history of the elastic stress, responsible for the cell formation, is obtained by global numeric calculation. At stresses below 1 MPa diffusion-controlled creep is the dominant mechanism of dislocation motion. Different d(tau) proportionalities in VCz and VGF crystals are determined. This is due to the varying thermal conditions and stay times of the growing crystal at high temperatures.

引用

页码：2934 / +

页数：3

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