Optical and electrical properties of silicon-implanted α-Al2O3

被引：5
|
作者：
Okumura, Hironori [1 ]
Jinno, Riena [1 ]
Uedono, Akira [1 ]
Imura, Masataka [2 ]
机构：
[1] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan
[2] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / 10期
关键词：
ion implantation; alumina; photoluminescence; Impurity diffusiong; thermal annealing; electrical property; Al2O3; SURFACE-MORPHOLOGY; PLANE SAPPHIRE; CONDUCTIVITY; DIFFUSION; GROWTH; AL2O3; SEMICONDUCTOR; LUMINESCENCE; DEPENDENCE; TRANSPORT;
D O I：
10.35848/1347-4065/ac21af
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the optical and electrical properties of silicon-implanted c-plane and m-plane alpha-Al2O3 substrates. A 100 nm deep box profile with a silicon concentration of 3 x 10(19) cm(-3) was obtained by multiple-energy silicon implantation. Photoluminescence measurements showed that the concentration of oxygen-vacancy-related defects increased due to ion implantation and decreased by annealing at 1300 degrees C. The silicon-implanted c-plane and m-plane alpha-Al2O3 samples had a surface roughness of less than 1 nm after thermal annealing below 1300 degrees C in a nitrogen ambient. Current-voltage measurements of the silicon-implanted m-plane alpha-Al2O3 sample after annealing at 1300 degrees C showed 0.6 mu A at a bias of 100 V.
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页数：7
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