Carrier statistics and quantum capacitance of graphene sheets and ribbons

被引：555

作者：

Fang, Tian ^{[1
]}

Konar, Aniruddha ^{[1
]}

Xing, Huili ^{[1
]}

Jena, Debdeep ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2776887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, fundamental results for carrier statistics in graphene two-dimensional sheets and nanoscale ribbons are derived. Though the behavior of intrinsic carrier densities in two-dimennsional graphene sheets is found to differ drastically from traditional semiconductors, very narrow (sub-10 nm) ribbons are found to be similar to traditional narrow-gap semiconductors. The quantum capacitance, an important parameter in the electrostatic design of devices, is derived for both two-dimensional graphene sheets and nanoribbons.

引用

页数：3

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