Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots crown by molecular beam epitaxy

被引：13
|
作者：
Nee, TE [1 ]
Yeh, NT
Chyi, JI
Lee, CT
机构：
[1] Natl Cent Univ, Inst Opt Sci, Chungli 32054, Taiwan
[2] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
来源：
SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 7-8期
关键词：
D O I：
10.1016/S0038-1101(98)00026-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The properties of the self-organized In0.5Ga0.5As quantum dots on In0.1Ga0.9As, GaAs, and In0.1Al0.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In0.5Ga0.5As quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared to those in GaAs and In0.1Al0.9As matrices. It is also found that the activation energy of the In0.5Ga0.5As quantum dots in GaAs matrix is higher than that of the dots in In0.1Ga0.9As matrix. Whereas the quantum dots in In0.1Al0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density. (C) 1998 Elsevier Science Ltd. All rights reserved.
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收藏
页码：1331 / 1334
页数：4
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