Study of diamond films prepared by hot filament chemical vapor deposition

被引:0
作者
Kromka, A [1 ]
Malcher, V [1 ]
Janík, J [1 ]
Dubravcová, V [1 ]
Satka, A [1 ]
Cerven, I [1 ]
机构
[1] Slovak Univ Technol Bratislava, Dept Microelect, Bratislava 81219, Slovakia
来源
ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS | 2000年
关键词
diamond; growth; chemical vapor deposition; activation energy; XRD;
D O I
10.1109/ASDAM.2000.889505
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A systematic study of growth rate and quality of polycrystalline diamond films synthesized by hybrid hot filament chemical vapor deposition (HF CVD) in dependence on growth conditions is carried out by Raman spectroscopy and X-ray diffraction measurements. Films grown at the substrate temperature of 600 degreesC show a good quality in sense of micro-Raman spectroscopy. The X-ray diffraction patterns revealed the change in preferential grain crystallographic orientation from (100) to (111) as a result of increased substrate temperature. The surface features of deposited films varied from rectangular- to triangular- like structures. The growth rate increased from 0.42 to 0.58 mum/h with increasing temperature from 600 to 900 degreesC for positively biased substrate. The growth rate is also dependent on substrate biasing. The influence of hybrid HFCVD method on possible lowering of activation energy down to 2.51 kcal/mol is presented.
引用
收藏
页码:299 / 302
页数:4
相关论文
共 9 条
[1]   LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].
ANGUS, JC ;
HAYMAN, CC .
SCIENCE, 1988, 241 (4868) :913-921
[2]   Modification on the electron field emission properties of diamond films: The effect of bias voltage applied in situ [J].
Chen, YH ;
Hu, CT ;
Lin, IN .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3890-3894
[3]  
KROMKA A, 2000, FINE MECH OPTICS, V45, P211
[4]   1ST-ORDER AND 2ND-ORDER RAMAN-SCATTERING FROM FINITE-SIZE CRYSTALS OF GRAPHITE [J].
NEMANICH, RJ ;
SOLIN, SA .
PHYSICAL REVIEW B, 1979, 20 (02) :392-401
[5]   Confocal Raman spectroscopic study of the heteroepitaxial diamond growth on Pt(111) [J].
Nishitani-Gamo, M ;
Tachibana, T ;
Kobashi, K ;
Sakaguchi, I ;
Loh, KP ;
Yamamoto, K ;
Ando, T .
DIAMOND AND RELATED MATERIALS, 1998, 7 (06) :783-788
[6]   The Raman spectrum of amorphous diamond [J].
Prawer, S ;
Nugent, KW ;
Jamieson, DN .
DIAMOND AND RELATED MATERIALS, 1998, 7 (01) :106-110
[7]   Homoepitaxial growth and hydrogen incorporation on the chemical vapor deposited (111) diamond [J].
Sakaguchi, I ;
Nishitani-Gamo, M ;
Loh, KP ;
Haneda, H ;
Ando, T .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1306-1310
[8]   INSITU DIAMOND GROWTH-RATE MEASUREMENT USING EMISSION INTERFEROMETRY [J].
SNAIL, KA ;
MARKS, CM .
APPLIED PHYSICS LETTERS, 1992, 60 (25) :3135-3137
[9]   TEMPERATURE-DEPENDENCE OF GROWTH-RATE FOR DIAMONDS GROWN USING A HOT-FILAMENT ASSISTED CHEMICAL-VAPOR-DEPOSITION METHOD AT LOW SUBSTRATE TEMPERATURES [J].
YAMAGUCHI, A ;
IHARA, M ;
KOMIYAMA, H .
APPLIED PHYSICS LETTERS, 1994, 64 (10) :1306-1308