Investigation of formation mechanism of Li-P dual-acceptor doped p-type ZnO

被引：18

作者：

Sharma, Pankaj ^{[1
]}

Bhardwaj, Ritesh ^{[1
]}

Singh, Rohit ^{[1
]}

Kumar, Shailendra ^{[2
]}

Mukherjee, Shaibal ^{[1
]}

机构：

[1] Indian Inst Technol Indore, Hybrid Nanodevice Res Grp, Elect Engn, Indore 453552, Madhya Pradesh, India

[2] Raja Ramanna Ctr Adv Technol, Indore 452013, Madhya Pradesh, India

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 09期

关键词：

PULSED-LASER DEPOSITION; THIN-FILMS; PHOSPHORUS; NITROGEN; LITHIUM;

D O I：

10.1063/1.5001071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, the dual-acceptor doping method has been used to produce low resistive and stable p-type ZnO thin films. The ZnO:(Li, P) films were deposited on n-type Si substrates by dual ion beam sputtering. The p-type conduction was achieved by thermal annealing at 800 degrees C for 20 min in N-2 ambient. The lowest resistivity of 0.016 Omega cm with a hole concentration and a Hall mobility of 2.31 x 10(20) cm(-3) and 1.6 cm(2)/V s, respectively, were obtained at an optimal deposition temperature of 300 degrees C. X-ray photoelectron spectroscopic analysis confirmed the formation of Li-Zn and P-Zn-2V(Zn) acceptor complexes along with a trace of P-O defects resulting in a high hole concentration. Published by AIP Publishing.

引用

页数：4

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