Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices

被引：8

作者：

De Michielis, Luca ^{[1
,2
]}

Iellina, Matteo ^{[2
]}

Palestri, Pierpaolo ^{[2
]}

Ionescu, Adrian M. ^{[1
]}

Selmi, Luca ^{[2
]}

机构：

[1] Ecole Polytech Fed Lausanne, Nanoelect Devices Lab Nanolab, CH-1015 Lausanne, Switzerland

[2] Univ Udine, Dept Elect Management & Mech Engn, I-33100 Udine, Italy

来源：

SOLID-STATE ELECTRONICS | 2012年 / 71卷

关键词：

Tunnel-FET; Band-to-band tunnelling; Monte Carlo numerical simulation; Drift diffusion model; STABILITY; MODEL;

D O I：

10.1016/j.sse.2011.10.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work a non-local band-to-band tunnelling model has been successfully implemented into a fullband Monte Carlo simulator and applied to Tunnel-FET devices. No stability or statistical noise problems were encountered in spite of particle weights ranging over many orders of magnitude (due to vastly different generation rates at different positions inside the device and biases) so that Tunnel-FET I-V curves could be traced over the whole on-off range. Different approaches for the choice of the tunnelling path have been compared and relevant differences are observed in both the current levels and the spatial distribution of the generated carriers. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：7 / 12

页数：6

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