Gate interfacial layer in hydrogen-terminated diamond field-effect transistors

被引：37

作者：

Kasu, Makoto ^{[1
]}

Ueda, Kenji ^{[1
]}

Kageshima, Hiroyuki ^{[1
]}

Yamauchi, Yoshiharu ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

关键词：

diamond film; hydrogen-termination; interface structure; high-resolution electron microscopy; diffusion;

D O I：

10.1016/j.diamond.2007.12.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cross-sectional transmission microscopy images of hydrogen-terminated diamond field-effect transistor reveal interfacial layers between the metal and hydrogen-terminated diamond layer. Especially interesting is that an interfacial layer between Al and H-terminated diamond is clearly seen. This layer corresponds to the energy barrier, which we confirmed from an RF analysis of a diamond FET. During growth, an amorphous-like subsurface layer with vacancies has already formed on H-terminated diamond, and during subsequent metal evaporation, metal diffuses through vacancies into the subsurface layer, and eventually the interfacial layer forms. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：741 / 744

页数：4

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