Electrical properties of stacked CuInSe2 thin films

被引：4
|
作者：
Ashour, A [1 ]
Akl, AA
Ramadan, AA
Abd El-Hady, K
机构：
[1] Menia Univ, Fac Sci, Dept Phys, Minia, Egypt
[2] Helwan Univ, Fac Sci, Dept Phys, Helwan, Egypt
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2005年 / 16卷 / 09期
关键词：
D O I：
10.1007/s10854-005-3233-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
CuInSe2 thin films have been prepared by the processing of stacked elemental layer (SEL) on glass substrates followed by annealing in air for different times. Films produced at 300 and 350 degrees C showed n-type semiconductor due to indium interstitial donors. Electrical properties (resistivity) of the CuInSe2 films have been systematically studied in terms of annealing temperatures and times. The resistivity was in the interval 10(1)-10(4) Omega cm and influenced by the heating time and decreased with temperature. The activation energy ranged from 0.046 to 0.154 eV in the range 300-600 K. The scattering process due to the energy barriers that exist between adjacent grains was considered. (C) 2005 Springer Science + Business Media, Inc.
引用
收藏
页码：599 / 602
页数：4
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