Synthesis, characterization and gas sensing performance of SnO2 thin films prepared by spray pyrolysis

被引:114
作者
Patil, Ganesh E. [1 ]
Kajale, D. D. [1 ]
Chavan, D. N. [2 ]
Pawar, N. K. [3 ]
Ahire, P. T. [1 ]
Shinde, S. D. [4 ]
Gaikwad, V. B. [4 ]
Jain, G. H. [1 ]
机构
[1] Arts Commerce & Sci Coll, Mat Res Lab, Nandgaon 423106, India
[2] Arts Commerce & Sci Coll, Dept Chem, Lasalgaon 422306, India
[3] Arts Commerce & Sci Coll, Dept Phys, Satana 423301, India
[4] KTHM Coll, Mat Res Lab, Nasik 422005, India
关键词
SnO2 thin films; spray pyrolysis; H2S gas sensor; sensitivity; selectivity; TIN OXIDE; OPTICAL-PROPERTIES; SENSITIVITY; TEMPERATURE; GROWTH; SIZE; NANOCRYSTALS; PURE;
D O I
10.1007/s12034-011-0045-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, SnO2 thin films were deposited onto alumina substrates at 350 degrees C by spray pyrolysis technique. The films were studied after annealing in air at temperatures 550 degrees C, 750 degrees C and 950 degrees C for 30 min. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption spectroscopy technique. The grain size was observed to increase with the increase in annealing temperature. Absorbance spectra were taken to examine the optical properties and bandgap energy was observed to decrease with the increase in annealing temperature. These films were tested in various gases at different operating temperatures ranging from 50-450 degrees C. The film showed maximum sensitivity to H2S gas. The H2S sensing properties of the SnO2 films were investigated with different annealing temperatures and H2S gas concentrations. It was found that the annealing temperature significantly affects the sensitivity of the SnO2 to the H2S. The sensitivity was found to be maximum for the film annealed at temperature 950 degrees C at an operating temperature of 100 degrees C. The quick response and fast recovery are the main features of this film. The effect of annealing temperature on the optical, structural, morphological and gas sensing properties of the films were studied and discussed.
引用
收藏
页码:1 / 9
页数:9
相关论文
共 51 条
[1]   TIN OXIDE THIN FILM TRANSISTORS [J].
AOKI, A ;
SASAKURA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (05) :582-&
[2]  
Asu V. V., 1990, THIN SOLID FILMS, V189, P217
[3]  
Aswal DineshK., 2007, Science and Technology of Chemiresistor Gas Sensors, P37
[4]   Analysis of nanocrystalline coatings of tin oxides on glass by atomic force microscopy [J].
Baranauskas, V ;
Santos, TEA ;
Schreiner, MA ;
Zhao, JG ;
Mammana, AP ;
Mammana, CIZ .
SENSORS AND ACTUATORS B-CHEMICAL, 2002, 85 (1-2) :90-94
[5]  
BESHKOV G, 1993, MAT SCI ENG B, V30, P1
[6]   Thin films engineering of indium tin oxide:: Large area flat panel displays application [J].
Betz, U ;
Olsson, MK ;
Marthy, J ;
Escolá, MF ;
Atamny, F .
SURFACE & COATINGS TECHNOLOGY, 2006, 200 (20-21) :5751-5759
[7]   THIN-LAYERS DEPOSITED BY THE PYROSOL PROCESS [J].
BLANDENET, G ;
COURT, M ;
LAGARDE, Y .
THIN SOLID FILMS, 1981, 77 (1-3) :81-90
[8]   MORPHOLOGY OF SNO2 THIN-FILMS OBTAINED BY THE SOL-GEL TECHNIQUE [J].
CHATELON, JP ;
TERRIER, C ;
BERNSTEIN, E ;
BERJOAN, R ;
ROGER, JA .
THIN SOLID FILMS, 1994, 247 (02) :162-168
[9]   TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].
CHOPRA, KL ;
MAJOR, S ;
PANDYA, DK .
THIN SOLID FILMS, 1983, 102 (01) :1-46
[10]  
Cullity B.D., 1956, ELEMENTS XRAY DIFFRA