Electronic Highways in Bilayer Graphene

被引:161
|
作者
Qiao, Zhenhua [1 ]
Jung, Jeil [1 ]
Niu, Qian [1 ,2 ]
MacDonald, Allan H. [1 ]
机构
[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA
[2] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
基金
美国国家科学基金会;
关键词
Bilayer graphene; kink states; pseudospin memory; ballistic transport; valley filter;
D O I
10.1021/nl201941f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Bilayer graphene with an interlayer potential difference has an energy gap and, when the potential difference varies spatially, topologically protected one-dimensional states localized along the difference's zero lines. When disorder is absent, electronic travel directions along zero-line trajectories are fixed by valley Hall properties. Using the Landauer-Buttiker formula and the nonequilibrium Green's function technique, we demonstrate numerically that collisions between electrons traveling in opposite directions, due to either disorder or changes in path direction, are strongly suppressed. We find that extremely long mean free paths of the order of hundreds of micrometers can be expected in relatively clean samples. This finding suggests the possibility of designing low power nanoscale electronic devices in which transport paths are controlled by gates which alter the interlayer potential landscape.
引用
收藏
页码:3453 / 3459
页数:7
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