Rare-earth doped chalcogenide thin films fabricated by pulsed laser deposition

被引：11

作者：

Dwivedi, PK

Sun, YW

Tsui, YY

Tonchev, D

Munzar, A

Koughia, K

Haugen, CJ

DeCorby, RG

McMullin, JN

Kasap, SO

机构：

[1] TRLabs, Edmonton, AB T6G 2V4, Canada

[2] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2V4, Canada

[3] Univ Saskatchewan, Dept Elect Engn, Saskatoon, SK S7N 5A9, Canada

来源：

APPLIED SURFACE SCIENCE | 2005年 / 248卷 / 1-4期

关键词：

amorphous chalcogenide; thin film; laser ablation; pulsed laser deposition; photoluminescence;

D O I：

10.1016/j.apsusc.2005.03.057

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Erbium doped Ge-Ga-Se thin films were fabricated by the pulsed laser deposition (PLD) technique in vacuum using a KrF pulse laser with lambda = 248 nm, and a pulse duration of 15 ns. The films were fabricated at room temperature onto glass substrates. The morphological, optical and thermal properties of the films showed good optical and thermal stability. The mechanical properties including film adhesion are relatively poor for thicker films and the microstructure reveals the presence of droplets. Annealing in vacuum improved the film adhesion and substantially enhanced the efficiency of photoluminescence. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：376 / 380

页数：5

共 24 条

[1] Preparation and properties of Ge-Ga-S glasses for laser hosts [J].