Model of transit time for SiGe HBT collector junction depletion-layer

被引：0

作者：

Hu, HY ^{[1
]}

Zhang, HM ^{[1
]}

Dai, XY ^{[1
]}

Jia, XZ ^{[1
]}

Cui, XY ^{[1
]}

Wang, W ^{[1
]}

Ou, JF ^{[1
]}

Wang, XY ^{[1
]}

机构：

[1] Xidian Univ, Inst Microelect, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS | 2005年 / 14卷 / 07期

关键词：

SiGeHBT; collector depletion-layer transit time;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The transit time through collector junction depletion-layer is an important parameter that influences AC gain and frequency performance. In SiGe heterojunction bipolar transistor (HBT) collector junction, the depletion-layer width is given in three cases. The models of collector depletion-layer transit time, considering the collector current densities and base extension effect, are established and simulated using MATLAB. The influence of the different collector junction bias voltage, collector concentration of As or P dopant and collector width on collector junction transit time is quantitatively studied. When the collector junction bias voltage, collector doping concentration and collector width are large, the transit time is quite long. And, from the results of simulations, the influence of the collector depletion-layer transit time on frequency performance is considerable in SiGe HBT with a thin base, so it could not be ignored.

引用

页码：1439 / 1443

页数：5