Performance and limitations of AlGaN/GaN HFETs grown on sapphire and SiC substrates

被引：4

作者：

Vescan, A ^{[1
]}

Dietrich, R ^{[1
]}

Wieszt, A ^{[1
]}

Lee, JS ^{[1
]}

Schurr, A ^{[1
]}

Leier, H ^{[1
]}

Daumiller, I ^{[1
]}

Käb, N ^{[1
]}

Kohn, E ^{[1
]}

机构：

[1] DaimlerChrysler AG, Res & Technol, D-89013 Ulm, Germany

来源：

2000 IEEE/CORNELL CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/CORNEL.2000.902546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：247 / 256

页数：10

共 17 条

[1] Fabrication and characterization of GaN FETs
Binari, SC
Kruppa, W
Dietrich, HB
Kelner, G
Wickenden, AE
Freitas, JA
[J]. SOLID-STATE ELECTRONICS, 1997, 41 (10) : 1549 - 1554
[2] DANG X, MRS 2000 SPRING M
[3] DIETRICH R, 2000, MRS INTERNET J NITRI, V5
[4] High efficiency monolithic gallium nitride distributed amplifier
Green, BM
Lee, S
Chu, K
Webb, KJ
Eastman, LF
[J]. IEEE MICROWAVE AND GUIDED WAVE LETTERS, 2000, 10 (07): : 270 - 272
[5] The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
Green, BM
Chu, KK
Chumbes, EM
Smart, JA
Shealy, JR
Eastman, LF
[J]. IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) : 268 - 270
[6] Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors
Klein, PB
Binari, SC
Freitas, JA
Wickenden, AE
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 2843 - 2852
[7] Large signal frequency dispersion of AlGaN GaN heterostructure field effect transistors
Kohn, E
Daumiller, I
Schmid, P
Nguyen, NX
Nguyen, CN
[J]. ELECTRONICS LETTERS, 1999, 35 (12) : 1022 - 1024
[8] High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy
Murphy, MJ
Chu, K
Wu, H
Yeo, W
Schaff, WJ
Ambacher, O
Eastman, LF
Eustis, TJ
Silcox, J
Dimitrov, R
Stutzmann, M
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (23) : 3653 - 3655
[9] Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
Nguyen, C
Nguyen, NX
Grider, DE
[J]. ELECTRONICS LETTERS, 1999, 35 (16) : 1380 - 1382
[10] High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
Nguyen, NX
Micovic, M
Wong, WS
Hashimoto, P
McCray, LM
Janke, P
Nguyen, C
[J]. ELECTRONICS LETTERS, 2000, 36 (05) : 468 - 469

← 1 2 →