Charge Trapping of HfLaTaON-Gated Metal-Oxide-Semiconductor Capacitors with Various Tantalum Concentrations

被引：2
作者：
Cheng, Chin-Lung [1 ,2 ]
Tsai, Hung-Yang [2 ]
机构：
[1] Natl Formosa Univ, Dept Electroopt Engn, Yunlin 63201, Taiwan
[2] Natl Formosa Univ, Dept Electroopt Engn, Yunlin 63201, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 01期
关键词：
ELECTRICAL-PROPERTIES; MOS DEVICES; DIELECTRICS; ENHANCEMENT; INTERFACE; FILMS; STACK;
D O I：
10.1149/1.3507296
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A comparative study on charge carrier generation/trapping in HfLaTaON-gated metal-oxide-semiconductor capacitors with various tantalum concentrations was presented under various postdeposition annealing. The trap energy level (Phi(trap)) involved in Frenkel-Poole conduction was estimated using current-voltage characteristics measured at various temperatures. Experimental results show that positive charges are generated in the HfLaTaON gate dielectric bulk. By developing proper Ta concentration in HfLaTaON dielectrics, the enhanced equivalent-oxide-thickness, the interface trap density (D-it), and the Phi(trap) were demonstrated. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3507296] All rights reserved.
引用
收藏
页码：II21 / II23
页数：3
相关论文
共 32 条
[1]   Change of the trap energy levels of the atomic layer deposited HfLaOx films with different La concentration [J].
An, Chee-Hong ;
Lee, Myung Soo ;
Choi, Ju-Yun ;
Kim, Hyoungsub .
APPLIED PHYSICS LETTERS, 2009, 94 (26)
[2]   MOS characteristics of ultrathin CVD HfAlO gate dielectrics [J].
Bae, SH ;
Lee, CH ;
Clark, R ;
Kwong, DL .
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (09) :556-558
[3]   Electrical characteristic enhancement of metal-oxide-semiconductor devices by incorporating WON buffer layer at HfTaSiON/Si interface [J].
Cheng, Chin-Lung ;
Chang-Liao, Kuei-Shu ;
Chang, Hsin-Chun ;
Wang, Tien-Ko .
SOLID-STATE ELECTRONICS, 2006, 50 (06) :1024-1029
[4]   Composition Effects of TixTay Dual-Doped HfOx/SiO2 Stacked Dielectrics on Electrical and Reliability Characteristics of Advanced Metal-Oxide-Semiconductor Capacitors [J].
Cheng, Chin-Lung ;
Horng, Jeng-Haur ;
Jeng, Jin-Tsong ;
Chiu, Min-Sheng .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2010, 10 (01) :116-122
[5]   Effects of interstitial oxygen defects at HfOxNy/Si interface on electrical characteristics of MOS devices [J].
Cheng, CL ;
Lu, CY ;
Chang-Liao, KS ;
Huang, CH ;
Wang, SH ;
Wang, TK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (01) :63-70
[6]   Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices -: art. no. 212902 [J].
Cheng, CL ;
Chang-Liao, KS ;
Huang, CH ;
Wang, TK .
APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3
[7]   Thermal stability of HfxTayN metal gate electrodes for advanced MOS devices [J].
Cheng, CL ;
Chang-Liao, KS ;
Wang, TC ;
Wang, TK ;
Wang, HCH .
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (03) :148-150
[8]  
Dzhurinskii B.F., 1975, RUSS J INORG CHEM+, V20, P2307
[9]  
FUJIOKA H, QMCV SIMULATOR
[10]   INVESTIGATION OF THE ELECTRONIC-STRUCTURE OF LA1-X(M2+)XCRO3, CR2O3 AND LA2O3 BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
HOWNG, WY ;
THORN, RJ .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1980, 41 (01) :75-81
1234