Switching of whispering gallery mode in hexagonal GaN microdisk by change in condition of reflection surface

被引：2
|
作者：
Kouno, T. [1 ]
Sakai, M. [2 ]
Kishino, K. [3 ]
Hara, K. [1 ]
机构：
[1] Shizuoka Univ, Dept Elect & Mat Sci, Hamamatsu, Shizuoka 4328011, Japan
[2] Univ Yamanashi, Interdisciplinary Grad Sch Med & Engn, Kofu, Yamanashi 4008511, Japan
[3] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, Tokyo 1028554, Japan
来源：
ELECTRONICS LETTERS | 2015年 / 51卷 / 02期
基金：
日本科学技术振兴机构; 日本学术振兴会;
关键词：
gallium compounds; III-V semiconductors; wide band gap semiconductors; whispering gallery modes; photoluminescence; optical variables measurement; light reflection; optical switches; microcavities; micromechanical resonators; quasiwhispering galley mode; QWGM; hexagonal GaN microdisk; reflection surface; optical microresonant mode switching; room temperature photoluminescence measurement; RT-PL measurement; side wall; temperature 293 K to 298 K; GaN; ROOM-TEMPERATURE; REFRACTIVE-INDEX; ALXGA1-XN;
D O I：
10.1049/el.2014.3724
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Optical microresonant mode switching in a hexagonal GaN microdisk, which acts as a whispering gallery mode (WGM) and quasi-WGM (QWGM), has been demonstrated by a change in the condition of the reflection surface under a room temperature photoluminescence (RT-PL) measurement. It has been confirmed that only the WGM in the microdisk, which uses all side walls of a microdisk as the reflection surface, was strongly affected by attaching another microdisk on a side wall. The result indicates that the WGM can be controlled independently by external factors.
引用
收藏
页码：170 / 171
页数：2
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