Proposal of a novel recess-free enhancement-mode AlGaN/GaN HEMT with field-assembled structure: a simulation study

被引：16

作者：

Wang, Zeheng ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Informat & Software Engn, Chengdu 610054, Peoples R China

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2019年 / 18卷 / 04期

关键词：

GaN; Enhancement mode; HEMT; Field-assembled structure; RECTIFIER;

D O I：

10.1007/s10825-019-01383-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel recess-free enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) is proposed. The device features a field-assembled structure (FAS) consisting of one short Schottky source finger as well as an overlying gate, which can modulate the potential beneath the source. This structure enables manipulation of the source barrier height and thus modulation of the current through the reverse source-to-drain Schottky barrier diode. According to the analytical model and detailed simulations, the proposed FAS-HEMT has great potential for use in power converters, monolithic microwave integrated circuits, and other applications.

引用

页码：1251 / 1258

页数：8

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