High temperature enthalpy and heat capacity of GaN

被引：58

作者：

Leitner, J

Strejc, A

Sedmidubsky, D

Ruzicka, K

机构：

[1] Inst Chem Technol, Dept Solid State Engn, CR-16628 Prague 6, Czech Republic

[2] Inst Chem Technol, Dept Inorgan Chem, CR-16628 Prague, Czech Republic

[3] Inst Chem Technol, Dept Phys Chem, CR-16628 Prague 6, Czech Republic

来源：

THERMOCHIMICA ACTA | 2003年 / 401卷 / 02期

关键词：

gallium nitride; heat capacity; heat content; thermodynamic functions;

D O I：

10.1016/S0040-6031(02)00547-6

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The heat capacity and the heat content of gallium nitride were measured by calvet calorimetry (320-570 K) and by drop calorimetry(670-1270 K), respectively. The temperature dependence of the heat capacity in the form C-pm = 49.552 + 5.440 x 10(-3) T - 2.190 x 10(6) T-2 + 2.460 x 10(8)T(-3) was derived by the least squares method. Furthermore, thermodynamic functions calculated on the basis of our experimental results and literature data on the molar entropy and the heat of formation of GaN are given. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：169 / 173

页数：5

共 10 条

[1] Barin I., 2008, Thermochemical Data of Pure Substances, VThird
[2] Structure and heat capacity of wurtzite GaN from 113 to 1073 K
Chen, XL
Lan, YC
Liang, JK
Cheng, XR
Cu, YP
Xu, T
Jiang, PZ
Lu, KQ
[J]. CHINESE PHYSICS LETTERS, 1999, 16 (02): : 107 - 108
[3] DAVYDOV AV, 1998, ELECTROCHEM SOC P, V98, P38
[4] SGTE DATA FOR PURE ELEMENTS
DINSDALE, AT
[J]. CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1991, 15 (04): : 317 - 425
[5] HIGH-TEMPERATURE HEAT CONTENTS OF III-V SEMICONDUCTOR SYSTEMS
ITAGAKI, K
YAMAGUCHI, K
[J]. THERMOCHIMICA ACTA, 1990, 163 : 1 - 12
[6] Knacke O., 1991, Thermochemical Properties of Inorganic Substances, V2nd
[7] Koshchenko VI, 1979, IAN SSSR NEORG MATER, V15, P1686
[8] Kung P, 2000, OPTO-ELECTRON REV, V8, P201
[9] Przhevalskii IN, 1998, MRS INTERNET J N S R, V3
[10] Enthalpy of formation of gallium nitride
Ranade, MR
Tessier, F
Navrotsky, A
Leppert, VJ
Risbud, SH
DiSalvo, FJ
Balkas, CM
[J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (17): : 4060 - 4063

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