Direct-write X-ray lithography using a hard X-ray Fresnel zone plate

被引：4

作者：

Lee, Su Yong ^{[1
,2
]}

Noh, Do Young ^{[1
,2
]}

Lee, Hae Cheol ^{[3
]}

Yu, Chung-Jong ^{[3
]}

Hwu, Yeukuang ^{[4
]}

Kang, Hyon Chol ^{[5
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Phys & Photon Sci, Gwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Gwangju 500712, South Korea

[3] POSTECH, Pohang Accelerator Lab, Pohang 790834, Gyeongbuk, South Korea

[4] Acad Sinica, Inst Phys, Taipei 11529, Taiwan

[5] Chosun Univ, Dept Mat Sci & Engn, Gwangju 501759, South Korea

来源：

JOURNAL OF SYNCHROTRON RADIATION | 2015年 / 22卷

基金：

新加坡国家研究基金会;

关键词：

direct-write X-ray lithography; X-ray writer; Fresnel zone plate; proximity effect; backscattered electrons; ELECTRON-BEAM LITHOGRAPHY; NM; RESOLUTION; MODELS;

D O I：

10.1107/S1600577515003306

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Results are reported of direct-write X-ray lithography using a hard X-ray beam focused by a Fresnel zone plate with an outermost zone width of 40 nm. An X-ray beam at 7.5 keV focused to a nano-spot was employed to write arbitrary patterns on a photoresist thin film with a resolution better than 25 nm. The resulting pattern dimension depended significantly on the kind of underlying substrate, which was attributed to the lateral spread of electrons generated during X-ray irradiation. The proximity effect originated from the diffuse scattering near the focus and electron blur was also observed, which led to an increase in pattern dimension. Since focusing hard X-rays to below a 10 nm spot is currently available, the direct-write hard X-ray lithography developed in this work has the potential to be a promising future lithographic method.

引用

页码：781 / 785

页数：5

共 29 条

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