The low-pressure infiltration of diamond by silicon to form diamond-silicon carbide composites

The infiltration of fine-grained diamond preforms by molten silicon is limited by the blocking of the pores as a result of the volume increase during the reaction of diamond with SiC. Therefore in the present paper the infiltration of preforms made with diamond powders with different grain sizes was investigated. The preforms were prepared using phenolic resin as a binder. With increasing resin content the pore size increases, but the pore volume decreases. As a result the infiltration depth increases strongly for medium resin content. For the fine-grained similar to 1.5 mu rn diamond preforms, a maximum infiltration depth of 2.5 mm is obtained at 10% resin, whereas at 5% resin only 1.25 mm could be infiltrated. (c) 2007 Elsevier Ltd. All rights reserved.