High-sensitive, self-powered deep UV photodetector based on p-CuSCN/n-Ga2O3 thin film heterojunction

被引：33
|
作者：
Sun, Bingyang [1 ]
Sun, Weiming [1 ]
Li, Shan [1 ]
Ma, Guoliang [1 ]
Jiang, Weiyu [1 ]
Yan, Zuyong [1 ]
Wang, Xia [5 ]
An, Yuehua [6 ]
Li, Peigang [1 ]
Liu, Zeng [2 ,3 ,4 ]
Tang, Weihua [1 ,2 ,3 ,4 ]
机构：
[1] Beijing Univ Posts & Telecommun, Sch Sci, Lab Informat Funct Mat & Devices, Beijing 100876, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Peoples R China
[4] Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab RF Integrat & Micropa, Nanjing 210023, Peoples R China
[5] Shanxi Inst Technol, Dept Elect Engn & Automat, Yangquan 045000, Peoples R China
[6] Guangdong Polytech Normal Univ, Sch Optoelect Engn, Guangzhou 510665, Peoples R China
来源：
OPTICS COMMUNICATIONS | 2022年 / 504卷
基金：
中国国家自然科学基金;
关键词：
Ga2O3; CuSCN; Heterojunction; DUV detector; ULTRAVIOLET PHOTODETECTORS; SOLAR; PERFORMANCE; CUSCN; INTERFACE;
D O I：
10.1016/j.optcom.2021.127483
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Herein, a CuSCN/Ga2O3 heterojunction device was fabricated by spin-coating and metal-organic chemical vapor deposition (MOCVD) methods. Under the irradiation of 254 nm deep ultraviolet (DUV) light with an intensity of 1000 mu W/cm(2) , the device shown high sensitivity and favorable self-powered performances with photo-to-dark current ratio (PDCR) of 1.29 x 10(4) , photo responsivity (R) of 5.5 mA/W, rejection ratio (R-270nm/R-600nm) of 4.33 x 10(3) , and specific detectivity (D*) of 3.8 x 10(11) cm Hz(1/2)W(-1) (Jones) at -5 V. In addition, the device has a rise time of 0.45 s and 3.80 s, and a decay time of 0.26 s and 0.26 s. In general, the CuSCN/Ga2O3 heterojunction prepared in this work may well be a potential candidate for achieving a self-powered and high-performance DUV photodetector.
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页数：6
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