Effect of built-in bias fields on the nanoscale switching in ferroelectric thin films

被引：15

作者：

Fu, DS

Suzuki, K

Kato, K

Suzuki, H

机构：

[1] Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan

[2] Shizuoka Univ, Dept Mat Sci, Hamamatsu, Shizuoka 4328561, Japan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 80卷 / 05期

关键词：

D O I：

10.1007/s00339-003-2348-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polarization switching in Pb(Zr0.3Ti0.7)O-3 thin films has been studied in nanoscale level using piezoresponse force microscopy. It is found that the switching in ferroelectric thin films is significantly influenced by the built-in bias field. It has two different origins: one time-independent, and the other time-dependent, which can be reasonably attributed to the effect of the film/electrode interface and the space charges, respectively. The redistribution of the unstable field can be triggered by a long pulse, and is shown to follow an exponential law.

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页码：1067 / 1070

页数：4

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