Influence of x irradiation on internal friction in silicon

被引：1

作者：

Kulish, NP ^{[1
]}

Maksimyuk, PA ^{[1
]}

Mel'nikova, NA ^{[1
]}

Onanko, AP ^{[1
]}

Strutinskii, AM ^{[1
]}

机构：

[1] T Shevchenko State Univ, UA-252022 Kiev, Ukraine

来源：

PHYSICS OF THE SOLID STATE | 1998年 / 40卷 / 07期

关键词：

Spectroscopy; Silicon; Activation Energy; State Physics; Silicon Substrate;

D O I：

10.1134/1.1130506

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An investigation was made of the influence of gamma irradiation on the temperature dependences of internal friction in disk-shaped silicon substrates in the kilohertz frequency range. After exposure to doses of 10(4) and 10(5) R, two dominant internal friction peaks were observed at similar to 330 and similar to 450 K with activation energies H-1 = 0.6 eV and H-2 = 0.9 eV, respectively. These peaks were evidently caused by reorientation of interstitial silicon atoms in dumbbell configurations. (C) 1998 American Institute of Physics.

引用

页码：1145 / 1146

页数：2