Electrical and structural properties of refractory metal multilayer Au/Ti/W/Ti ohmic contacts to n-GaAs

被引：2

作者：

Zhou, J ^{[1
]}

Xia, GQ ^{[1
]}

Li, BH ^{[1
]}

Liu, WC ^{[1
]}

Wu, BH ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 5A期

关键词：

structural; electrical; ohmic contact; resistance; barrier;

D O I：

10.1143/JJAP.42.2609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ohmic contact characteristics of Au/Ti/W/Ti on n-GaAs were evaluated. Structural and electrical properties were studied by means of X-ray diffraction (XRD), Auger energy spectrum (AES) and an HP4145B analyzer. AES results show that W is a good barrier for preventing Ga and As from out-diffusing. Electrical measurement showed a minimum ohmic contact resistance of 5.5 x 10(-6) Omegacm(2). Thermal annealing results revealed that Au/Ti/W/Ti contact to GaAs treated by a (NH4)(2)S solution can withstand a temperature of 400degreesC for 15 h. This indicates that Au/Ti/W/Ti contact to (NH4)(2)S-treated GaAs may be suitable for practical application.

引用

页码：2609 / 2611

页数：3