Electrical and structural properties of refractory metal multilayer Au/Ti/W/Ti ohmic contacts to n-GaAs

被引：2
作者：
Zhou, J [1 ]
Xia, GQ [1 ]
Li, BH [1 ]
Liu, WC [1 ]
Wu, BH [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Microsyst & Informat Technol, Shanghai 200050, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 5A期
关键词：
structural; electrical; ohmic contact; resistance; barrier;
D O I：
10.1143/JJAP.42.2609
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The ohmic contact characteristics of Au/Ti/W/Ti on n-GaAs were evaluated. Structural and electrical properties were studied by means of X-ray diffraction (XRD), Auger energy spectrum (AES) and an HP4145B analyzer. AES results show that W is a good barrier for preventing Ga and As from out-diffusing. Electrical measurement showed a minimum ohmic contact resistance of 5.5 x 10(-6) Omegacm(2). Thermal annealing results revealed that Au/Ti/W/Ti contact to GaAs treated by a (NH4)(2)S solution can withstand a temperature of 400degreesC for 15 h. This indicates that Au/Ti/W/Ti contact to (NH4)(2)S-treated GaAs may be suitable for practical application.
引用
收藏
页码：2609 / 2611
页数：3
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