Controlling the properties of InGaAs quantum dots by selective-area epitaxy

被引：28
作者：
Mokkapati, S [1 ]
Lever, P
Tan, HH
Jagadish, C
McBean, KE
Phillips, MR
机构：
[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
[2] Univ Technol Sydney, Microstruct Anal Unit, Sydney, NSW 2007, Australia
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 11期
基金：
澳大利亚研究理事会;
关键词：
D O I：
10.1063/1.1875745
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of the selectively grown dots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAs quantum well and InGaAs quantum dots on the same wafer is demonstrated. By using a single-step growth, dots luminescing at different wavelengths, in the range 1150-1230 nm, in different parts of the same wafer are achieved. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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