Two-dimensional metallic MoS2: A DFT study

被引:26
|
作者
Lin, Xinyue [1 ]
Li, Wentong [1 ]
Dong, Yingying [1 ]
Wang, Chen [1 ]
Chen, Qi [1 ]
Zhang, Hui [1 ]
机构
[1] Shenyang Univ, Normal Coll, Shenyang 110044, Peoples R China
基金
中国国家自然科学基金;
关键词
Theoretic calculations; MoS2; Electronic structure; TOTAL-ENERGY CALCULATIONS; POROUS MOS2; GRAPHENE; TRANSITION; CARBON; MICROSPHERES; FABRICATION; GENERATION; DESIGN; BN;
D O I
10.1016/j.commatsci.2016.07.020
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The single-layer MoS2 has drawn extensive attention due to its appealing properties for device applications. In this paper, a new porous MoS2 (so-called as P-MoS2) is theoretically explored. Compared with conventional H-MoS2, P-MoS2 has quite different crystal structure, and more importantly, it possess 27% larger specific surface area, making it superior candidates in energy industry and catalysts. Furthermore, P-MoS2 becomes metallic from semiconducting H-MoS2. Finally, P-MoS2 transforms back to a semiconductor with tunable band gap by changing applied strains. Our studies enrich the family of MoS2 nanostructures, and also extend the application range. More interestingly, it also provides a platform of exploring other porous TMDs with diverse electronic structures. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:49 / 53
页数:5
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