Microscopic calculation and measurement of the laser gain in a (GaIn)Sb quantum well structure

被引：15

作者：

Bueckers, C. ^{[1
,2
]}

Thraenhardt, A. ^{[1
,2
]}

Koch, S. W. ^{[1
,2
]}

Rattunde, M. ^{[3
]}

Schulz, N. ^{[3
]}

Wagner, J. ^{[3
]}

Hader, J. ^{[4
]}

Moloney, J. V. ^{[4
]}

机构：

[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[2] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

[3] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[4] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 07期

关键词：

D O I：

10.1063/1.2883952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A detailed microscopic calculation and experimental measurements of the optical gain from a (GaIn)Sb structure are presented. For a given excitation density, the gain in the (GaIn)Sb material system considerably exceeds that of a comparable equivalent (GaIn)As/GaAs structure. The physical reasons for this high gain are analyzed and attributed mostly to band structure effects. (C) 2008 American Institute of Physics.

引用

页数：3

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