Characteristics of a Pt/NiO thin film-based ammonia gas sensor

被引：115
作者：
Chen, Huey-Ing [1 ]
Hsiao, Cheng-Yu [2 ]
Chen, Wei-Cheng [2 ]
Chang, Ching-Hong [2 ]
Chou, Tzu-Chieh [2 ]
Liu, I-Ping [1 ]
Lin, Kun-Wei [3 ]
Liu, Wen-Chau [2 ]
机构：
[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, 1 Univ Rd, Tainan 70101, Taiwan
[3] Chaoyang Univ Technol, Dept Comp Sci & Informat Engn, 168 Jifeng E Rd, Taichung 41349, Taiwan
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2018年 / 256卷
关键词：
Pt/NiO; Resistor-type; Ammonia; Schottky diode; Sensing response ratio; SENSING PROPERTIES; NIO; NANOFIBERS; FIELD;
D O I：
10.1016/j.snb.2017.10.032
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The sensing characteristics of a Pt/NiO thin film-based resistor-type ammonia gas sensor are comprehensively studied and demonstrated. Experimentally, the studied Pt/NiO ammonia gas sensor exhibits improved performance, including a higher sensing response of ratio of 1278%, an extremely low detection limit of 10 ppb NH3/air, and fast speeds, at an optimal operating temperature of 300 degrees C. Based on the advantages indicated above and the benefits of its simple structure, relatively easy fabrication, and inherent p-type semiconductor properties, the studied device is promising for high-performance ammonia gas sensing and complementary metal oxide sensor (CMOS) array applications. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：962 / 967
页数：6
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