Geiger mode simulation of GaN homojunction avalanche photodetectors

被引：4

作者：

Sridharan, Sriraaman ^{[1
]}

Yoder, P. D. ^{[1
]}

Shen, S. C. ^{[2
]}

Ryou, J. H. ^{[2
]}

Dupuis, R. D. ^{[2
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, 210 Technol Circle, Savannah, GA 31407 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

D O I：

10.1002/pssc.200880903

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigate the Geiger mode operation of wurtzite GaN-based homojunction avalanche photodiodes (APDs) via fullband ensemble Monte Carlo charge transport simulation. Critical design parameters for photon counting applications are identified, and their influence on single photon detection efficiency (SPDE) is quantified. Simulations demonstrate simultaneous reduction in breakdown field strength and growth in SPDE with increasing active region thickness. We also report a significant increase in avalanche growth rate with reduction in active region thickness, and relate for the first time the characteristic time scale to the product of avalanche coefficients and saturated drift velocities. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S662 / S665

页数：4

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