Metastable GaAsBi alloy grown by molecular beam epitaxy

被引：105

作者：

Yoshimoto, M ^{[1
]}

Murata, S

Chayahara, A

Horino, Y

Saraie, J

Oe, K

机构：

[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Kyoto 6068585, Japan

[2] AIST Kansai, Ikeda, Osaka 5638577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 10B期

关键词：

GaAsBi; MBE; metastable alloy; X-ray diffraction; RBS; bismuth; semimetal-semiconductor alloy;

D O I：

10.1143/JJAP.42.L1235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs1-xBix has been grown at a substrate temperature (T-sub) between 350 and 410degreesC by molecular beam epitaxy. The relationship between GaBi molar fraction (x) evaluated by Rutherford backscattering spectroscopy and the lattice constant showed good linearity. To achieve Bi incorporation into the epilayer, As flux was adjusted in a limited range on the brink of As shortage on the growing surface. The Bi incorporation was saturated at a large Bi flux, probably due to a low miscibility of Bi with GaAs. The value of x increased up to 4.5% with decreasing T-sub to 350degreesC.

引用

页码：L1235 / L1237

页数：3

共 10 条

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