Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg1-xCdxTe Layers

被引：4

作者：

Kozlov, D. V. ^{[1
,2
]}

Rumyantsev, V. V. ^{[1
,2
]}

Morozov, S. V. ^{[1
,2
]}

Kadykov, A. M. ^{[1
]}

Fadeev, M. A. ^{[1
]}

Huebers, H. -W. ^{[3
]}

Gavrilenko, V. I. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603950, Russia

[3] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 11期

基金：

俄罗斯科学基金会;

关键词：

OPTICAL MODULATION SPECTROSCOPY; PHOTOLUMINESCENCE; HETEROSTRUCTURES;

D O I：

10.1134/S1063782618110131

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A method for calculating the states of multivalent donors and acceptors in Hg1 -xCdxTe materials is developed. The ionization energies of deep acceptor and donor centers in epitaxial Hg1 -xCdxTe films are calculated. The calculation method takes into account the influence of both the valence band and the conduction band on the states of impurity-defect centers. The calculations of energies for the levels of tetravalent acceptors and donors associated with crystalline structure defects indicate the intercenter nature of lines observed previously in the photoluminescence spectra of Hg1 -xCdxTe films.

引用

页码：1369 / 1374

页数：6

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