Enhancement-Mode N-Polar GaN Metal-Insulator-Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120GHz

被引：16

作者：

Singisetti, Uttam ^{[1
]}

Wong, Man Hoi ^{[1
]}

Dasgupta, Sansaptak ^{[1
]}

Speck, James S. ^{[2
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 02期

关键词：

THRESHOLD VOLTAGE; ALGAN/GAN HEMTS; TECHNOLOGY;

D O I：

10.1143/APEX.4.024103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the small-signal high-frequency performance of novel enhancement-mode N-polar GaN metal-insulator-semiconductor field effect transistors with a peak short-circuit current gain cutoff frequency (f(t)) of 120 GHz for a 70-nm gate length device. The device has an 8-nm GaN channel with AlN back barrier and a 5-nm SiN(x) gate dielectric. These devices show a peak drain current of 0.74A/mm and peak transconductance of 260mS/mm at a drain bias of 3.0 V. This is the first demonstration of high-frequency operation of N-polar enhancement-ode GaN devices. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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