Dynamical processes of high-density excitons in GaSe crystals

被引:0
作者
Tanji, A
Yan, XH
Akai, I
Karasawa, T
Aguekian, VF
机构
[1] Osaka City Univ, Grad Sch Sci, Dept Phys, Sumiyoshi Ku, Osaka 5588585, Japan
[2] St Petersburg State Univ, Dept Phys, St Petersburg 198904, Russia
关键词
GaSe; high-density exciton; inelastic scattering; relaxation dynamics;
D O I
10.1143/JPSJ.72.2646
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Dynamical processes of high-density excitons and their relaxation mechanisms in GaSe crystals have been investigated in real and momentum spaces by observing resonant luminescence spectra of the excitons in the time- and space-resolved regimes. Temporal profiles of the luminescence show remarkable excitation-density dependence. The temporal profiles have been well explained by a nonlinear rate equation including a two-exciton scattering process and localization to shallow trapping states at high density. Above a certain excitation density, spatial propagation becomes remarkable owing to the suppression of localization due to site-filling effects, giving the group velocity similar to1.0 x 10(8) cm/s. The other characteristic features of the exciton dynamics at high density appear as inelastic scattering processes on recoil luminescence bands in the time- and space-resolved spectra. From these results, detailed scattering and relaxation mechanisms of the excitons in this material at high density have been clarified in the momentum space.
引用
收藏
页码:2646 / 2655
页数:10
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