Optical and electrical characterization of Cu(In,Ga)Se2 thin film solar cells with varied absorber layer thickness

被引：30
作者：
Jarzembowski, Enrico [1 ]
Maiberg, Matthias [1 ]
Obereigner, Florian [1 ]
Kaufmann, Kai [2 ]
Krause, Stephan [3 ]
Scheer, Roland [1 ]
机构：
[1] Univ Halle Wittenberg, Inst Phys, Photovolta Grp, D-06120 Halle, Germany
[2] Univ Appl Sci, Hsch Anhalt, D-06366 Kothen, Germany
[3] Fraunhofer Ctr Silicon Photovolta CSP, D-06120 Halle, Saale, Germany
来源：
THIN SOLID FILMS | 2015年 / 576卷
关键词：
Cu(In; Ga)Se-2; Co-evaporation; Absorber thickness; Ultra-thin CIGS; Solar cells; Thin film; RESOLVED PHOTOLUMINESCENCE; TIME;
D O I：
10.1016/j.tsf.2015.01.004
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cu(In,Ga)S-2 solar cells with different absorber layer thicknesses prepared by means of a three-stage co-evaporation process are investigated to determine the electrical losses depending on the absorber layer thickness. The absorber material is characterized by energy dispersive X-ray spectroscopy, time of flight secondary ion mass spectroscopy and optical transmission and reflectance measurements. The acceptor concentration is determined admittance spectroscopy in the range of 8.4 center dot 10(15) cm(-3) to 3.8 center dot 10(16) cm(-3). From external quantum efficiency and current-voltage-measurements combined with the determined absorption coefficient we attribute the losses in the short circuit current density to incomplete absorption. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：75 / 80
页数：6
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