Crucial Role of the Electron Transport Layer and UV Light on the Open-Circuit Voltage Loss in Inverted Organic Solar Cells

被引:13
作者
Tournebize, Aurelien [1 ]
Mattana, Giorgio [1 ,3 ]
Gorisse, Therese [1 ,4 ]
Bousquet, Antoine [2 ]
Wantz, Guillaume [1 ]
Hirsch, Lionel [1 ]
Chambon, Sylvain [1 ]
机构
[1] Univ Bordeaux, CNRS, IMS, Bordeaux INP,ENSCBP,UMR 5218, F-33405 Bordeaux, France
[2] Univ Pau & Pays Adour, IPREM, F-64053 Pau, France
[3] Univ Paris Diderot, Sorbonne Paris Cite, ITODYS, UMR CNRS 7086, 15 Rue JA de Baif, F-75205 Paris 13, France
[4] Ctr Tech Papier, 59 Rue Jean Perrin, F-59500 Zi De Dorignies, Douai, France
关键词
organic solar cell; burn-in stabillity; UV; electron transport layer; HIGH-PERFORMANCE; SINGLE-JUNCTION; EFFICIENCY; LIFETIME; PHOTOSTABILITY; DEGRADATION; ENABLES; P3HT;
D O I
10.1021/acsami.7b09059
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Understanding the degradation mechanisms in organic photovoltaics is crucial in order to develop stable organic semiconductors and robust device architectures. The rapid loss of efficiency, referred to as burn-in, is a major issue to be addressed. This study reports on the influence of the electron transport layer (ETLs) and UV light on the drop-of open-circuit voltage (V-oc) for P3HT:PC60 BM-based devices. The results show that V-oc loss is induced by the UV and, more importantly, that the ETL can amplify it, with TiOx yielding a stronger drop than ZnO. Using impedance spectroscopy (IS) and X-ray photoelectron spectroscopy (XPS), different degradation mechanisms were identified according to whether the ETL is TiOx or ZnO. For TiOx-based devices, the formation of an interface dipole was identified, resulting, in a loss of the flat-band potential (V-oc,) and, thus, of the V-oc . For ZnO-based devices, chemical modifications of the metal oxide and active layer at the interface were detected, resulting in a doping of the active layer which impacts the V-oc. This study highlights the role of the architecture and, more specifically, of the ETL in the severity of burn-in and degradation pathways.
引用
收藏
页码:34131 / 34138
页数:8
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