Formation of longitudinal aggregation of inclusions in bulk sapphire and yttrium-aluminum garnet grown by horizontal directed crystallization method

被引:11
|
作者
Nizhankovskyi, S. V. [1 ]
Tan'ko, A. V. [1 ]
Sidelnikova, N. S. [1 ]
Adonkin, G. T. [1 ]
机构
[1] Natl Acad Sci Ukraine, Inst Single Crystals, State Sci Inst, Kharkov 61001, Ukraine
关键词
crystal growth; inclusion; convection; interface shape; computer simulation;
D O I
10.1002/crat.201400430
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
It is shown that the formation of longitudinal aggregation of inclusions in bulk sapphire and yttrium-aluminum garnet (YAG) grown by the method of HDC is caused by local accumulation of impurities, disturbance of morphological stability of the crystallization front and capture of inclusions and impurities in the nodal region of the melt two-vortex convection. Studied is the influence of thermal and geometrical parameters of the melt and the shape of the crystallization front on the conditions of the formation of the capture of inclusions.
引用
收藏
页码:223 / 229
页数:7
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