Direct observation of interstitial molecular N2 in Si oxynitrides -: art. no. 022901

被引：33

作者：

Chung, YS

Lee, JC

Shin, HJ

机构：

[1] Samsung Adv Inst Technol, Analyt Engn Ctr, Suwon 440600, South Korea

[2] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea

[3] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 02期

关键词：

D O I：

10.1063/1.1851620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution near edge x-ray absorption spectroscopy and x-ray photoelectron spectroscopy were used to characterize ultrathin plasma-nitrided silicon oxides. The direct observation of interstitial molecular N-2 was made by vibrationally resolved N K-edge absorption spectroscopy. The N-2 molecules were trapped during the plasma nitridation at the near surface and could be eliminated by annealing via molecular out-diffusion. (C) 2005 American Institute of Physics.

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页码：022901 / 1

页数：3

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