Ge-Based Asymmetric RRAM Enable 8F2 Content Addressable Memory

被引：24

作者：

Chen, Bing ^{[1
]}

Zhang, Yi ^{[1
]}

Liu, Wei ^{[1
]}

Xu, Shun ^{[1
]}

Cheng, Ran ^{[1
]}

Zhang, Rui ^{[1
]}

Zhao, Yi ^{[1
,2
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn & Informat Sci, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 09期

关键词：

Content addressable memory (CAM); RRAM; Ge; nonvolatile; integration density; DESIGN; CAM;

D O I：

10.1109/LED.2018.2856537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we developed an asymmetric Ge-based RRAM using a fully CMOS compatible process. Due to the adoption of a thin AlOx/GeOx interfacial layer, the TiN/HfOx/AlOx/GeOx/Ge structured RRAM shows both excellent switching behavior and diodelike rectifying characteristics. Based on the asymmetric RRAM device, a high density nonvolatile content addressable memory was proposed and demonstrated, and its function was verified by experimental measurements. This novel two-asymmetric RRAM-based TCAM cell with only 8F(2) size is very promising for future energy and area-efficient IoT and Internet applications.

引用

页码：1294 / 1297

页数：4

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