Near-infrared light emissions from Er-doped ZnO thin films induced by an electrical field

被引：1

作者：

Tanaka, Shigeru ^{[1
]}

Ishikawa, Yukari ^{[1
]}

Shibata, Noriyoshi ^{[1
]}

机构：

[1] Japan Fince Ceram Ctr, Atsuta Ku, Nagoya, Aichi 4568587, Japan

来源：

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 2007年 / 115卷 / 1341期

关键词：

electroluminescence; ZnO; thin film; near-infrared emission; erbium; photoluminescence;

D O I：

10.2109/jcersj.115.341

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We obtained near-infrared (NIR) emissions by applying an electric field to a ZnO thin film containing Er ions. The sample construction was indium tin oxide (ITO) film/Er-doped ZnO film/ITO film on a SiO2 glass substrate. By applying a suitable alternative voltage to the sample, a broad luminescence in the NIR wavelength range was observed. The intensity of the luminescence increased with applied voltage. The luminescence induced by the electric field had a wavelength of 1.5 mu m, which suggests that the light emission is related to the intrashell transition of Er3+.

引用

页码：341 / 343

页数：3

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