Preparation and application in p-n homojunction diode of p-type transparent conducting Ga-doped SnO2 thin films

被引：64

作者：

Yang, Tieying ^{[1
]}

Qin, Xiubo ^{[1
]}

Wang, Huan-hua ^{[1
]}

Jia, Quanjie ^{[1
]}

Yu, Runsheng ^{[1
]}

Wang, Baoyi ^{[1
]}

Wang, Jiaou ^{[1
]}

Ibrahim, Kurash ^{[1
]}

Jiang, Xiaoming ^{[1
]}

He, Qing ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 19期

关键词：

p-Type transparent conducting oxide; Ga-doped SnO2; Thin films; p-n homojunction diode; Magnetron sputtering; X-ray diffraction; X-ray photoelectron spectroscopy; FABRICATION;

D O I：

10.1016/j.tsf.2010.04.063

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The direct preparation of p-type transparent conducting Ga-doped SnO2 thin films and their fundamental application in transparent p-n homojunction diode were realized. The films were grown in an active oxygen ambient using reactive rf magnetron sputtering without post-deposition annealing involved. This method improved the electrical properties of the films while maintaining their optical transparency. By growing a p-type thin film on commercial n-type SnO2:F-coated glass, transparent p-n homojunction diode was obtained. It exhibits a distinct current-voltage rectifying characteristic, manifesting this p-type thin film and the fabrication technology are suitable for industrial applications. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：5542 / 5545

页数：4

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