Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature

被引：14

作者：

Miyajima, Shinsuke ^{[1
]}

Sawamura, Makoto ^{[1
]}

Yamada, Akira ^{[2
]}

Konagai, Makoto ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 05期

关键词：

silicon carbide; chemical vapor deposition; structural properties; low-temperature deposition; solar cells;

D O I：

10.1143/JJAP.47.3368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of plasma power on the structural properties of hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) films deposited by very high frequency plasma-enhanced chemical vapor deposition was investigated. The film structure was strongly influenced by the plasma power due to the change in atomic hydrogen density in the vapor phase. A high plasma power of above 170 W (2.17 W/cm(2)) is required for depositing nc-3C-SiC:H films. [DOI: 10.1143/JJAP.47.3368]

引用

收藏

页码：3368 / 3371

页数：4

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