Microwave dielectric properties of the (BaxSr1-x)TiO3 thin films on alumina substrate

被引：8

作者：

Qi, Peng ^{[1
]}

Zhai, Ji-wei ^{[1
]}

Yao, Xi ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2012年 / 38卷

关键词：

Thin films; Interdigital electrode; Microwave properties; (BaxSr1-x)TiO3; HIGH TUNABILITY; RF; FIELD;

D O I：

10.1016/j.ceramint.2011.04.082

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Barium strontium titanate, (BaxSr1-x)TiO3 (BST) thin films have been prepared on alumina substrate by sot gel technique. The X-ray patterns analysis indicated that the thin films are perovskite and polycrystalline structure. The interdigital electrode with 140 nm thickness Au/Ti was fabricated on the film with the finger length of 80 mu m, width of 10 mu m and gaps of 5 mu m. The temperature dependence of dielectric constant of the BST thin films in the range from -50 degrees C to 50 degrees C was measured at 1 MHz. The dielectric properties of the BST thin films were measured by HP 8510C vector network analyzer from 50 MHz to 20 GHz. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：S197 / S200

页数：4

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